As the basic storage unit of spin transfer torque magnetic random-access memory (STT-MRAM),the perpendicular magnetic anisotropy (PMA)magnetic tunnel junction (MTJ) has been extensively studied in recent years. Lowering the critical switching current and improving the data retention are two crucial pathways to optimize the performance of STT-MRAM. However, the conventional MTJ can merely achieve both. In this paper, we present a physics-based compact model of Ta/CoFeB/MgO PMA double-barrier MTJ (DMTJ) with enhanced thermal stability recording structure. Combination of double-barrier and synthetic double-free layers can heighten the STT effect and enhance the thermal stability simultaneously. A larger STT switching efficiency, compared with conventional MTJ,can thus be realized. The modeling results show great agreement with experimental results. A 1-bit magnetic full adder (MFA) based on DMTJ, as a hybrid logic-in memory circuit example, has been designed and simulated to validate its functionality. This SPICE-compatible compact model will be useful for high-performance hybrid MTJ/CMOS circuit and system designs.
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